Abstract

This article presents a comprehensive experimental study of optical properties of Li-doped ZnO nanorods grown by a low temperature (300 °C) thermal decomposition method. In particular, a study of the room temperature photoluminescence spectra dependence on the Li concentration is presented here. The doping of Li in ZnO nanorods results in a redshift in near band edge emission (NBE) compared to the undoped ZnO nanorods. Depending on the Li concentration, we observe a green emission in Photoluminescence spectra. The possible physical mechanisms governing the visible region luminescence are also discussed. These results show that Li-doped ZnO nanorods with strong visible region luminescence have potential applications in optoelectronic devices.

Highlights

  • In recent years, quasi-one dimensional nanostructures such as nanowires (NWs) and nanorods (NRs) made from ZnO have been studied to understand the interesting fundamental properties present in such low dimensional systems and the exciting applications these materials have in nanotechnology based optoelectronic and field emission devices.[1,2,3] doping (n or p-type) of semiconductor nanorods i.e., control over the polarity and concentration is necessary for functional electronic and optoelectronic devices

  • There are numerous studies about different kinds of doping materials as a donor in ZnO nanomaterials to obtain high quality n-type ZnO nanomaterials in literature,[6,7,8] but an important challenge that needs to be prevail for the realization of most ZnO based devices is the fabrication of p-type material

  • We report the growth and Li doping of ZnO NRs by a low temperature thermal decomposition method, which is a cost effective and rapid synthesis method for fabricating ZnO NRs

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Summary

Introduction

Quasi-one dimensional nanostructures such as nanowires (NWs) and nanorods (NRs) made from ZnO have been studied to understand the interesting fundamental properties present in such low dimensional systems and the exciting applications these materials have in nanotechnology based optoelectronic and field emission devices.[1,2,3] doping (n or p-type) of semiconductor nanorods i.e., control over the polarity and concentration is necessary for functional electronic and optoelectronic devices. S. Gupta,2,a and Sandeep Kumar1,a 1Department of Physics, Central University of Rajasthan, Ajmer 305801, India 2Department of Applied Physics, Indian Institute of Technology (Indian School of Mines), Dhanbad 826004, India (Received 10 October 2017; accepted 28 December 2017; published online 9 January 2018)

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