Lithium diffusion profile onto highly resistive p-type silicon

Abstract

In this work, the effect of temperature and time of diffusion on the lithium (Li) profile into p-type highly resistive silicon have been investigated. The high-purity Li metal (99.995%) was deposited onto p-type (1 1 1) silicon surface and thermally diffused into the bulk at a 2×10 −6 Torr vacuum pressure. The four-probes technique was used to determine the diffusion profile of Li impurities into silicon. Scanning electron microscopy (SEM) was used to measure the diffused junction depth ( X j). The Li diffusion constant D Li was then extracted using the measured surface concentration N Li. Thus, the variation of D Li as a function of diffusion temperature was determined. Simulated profiles was obtained by means PC1D calculate tool. A good agreement was found when the simulated and experimental results were compared with those of the literature values.