Abstract
Gallium arsenide crystals grown by the Bridgman and floating-zone techniques have been examined for Li by means of special analytical procedures based on the flame spectrometer. Approximately 10 16 cm −3 Li has been found in both doped and undoped GaAs. Polycrystalline GaSb showed less than 5 × 10 15 cm −3 Li, the limit of detection. Fused quartz used in the crystal preparation is suggested as a possible source of Li contamination. The Li content of fused-quartz tubing ranges between 10 17 and 5 × 10 18 cm −3 Li. Synthetic-quartz tubing contains < 3 × 10 15 cm −3 Li. A convenient, rapid and non-destructive method for determining lithium (> 10 15 cm −3 Li) in semiconductors and other materials is described.
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