Abstract
The effects of B doping and its impurity concentration (1600, 4700, and 12400 ppm) on the electrochemical lithiation/delithiation of Si were examined using single crystals synthesized by the Czochralski method.
Full Text 
Sign-in/Register to access full text options
Sign-in/Register to access full text options 
Published version (
Free)
Free) 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call
