Liquidus and solidus data at 500 °C for the In-Ga-Sb system

Abstract

Liquidus and solidus points at 500 °C have been determined for the In-Ga-Sb system. The liquidus points were obtained from weight loss measurements of GaSb wafers when contacted to preweighed under-saturated In-Ga-Sb melts. The solidus points were found by measuring the composition of In x Ga 1- x Sb (0 < x < 0.12) grown by liquid phase epitaxy on (111) GaSb substrates. Layers with x > 0.12 were polycrystalline. Blom and Plaskett have calculated the ;iquidus and solidus isotherms for this system by assuming that the liquid and solid phases were regular solutions. The experimental data are consistent with their liquidus isotherm for 500 °C, but not with the solidus isotherm at this temperature.