Abstract
Quaternary InAsPSb epitaxial layers have been directly grown on InAs substrate without buffer layer using both the supercooling and step-cooling liquid-phase epitaxy (LPE) techniques. Some properties of InAsPSb/InAs layers were investigated. The quaternary layer is lattice matched to InAs by about 1.6×10 −3. X-ray diffraction spectra half-width maximum of the quaternary epilayer is about 200 s. I– V characteristics of the p–n junction formed between p-InAsPSb and n-InAs substrate was measured at 300 and 77 K. The laser emission with wavelength of 3.09 μm was observed at 12 K from the p–n junction of the p-InAs 0.82P 0.12Sb 0.06 epilayers and the n-InAs substrate.
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