Abstract
In view of obtaining a step bunched morphology on large 4H-SiC surfaces, a sandwich configuration is investigated. A piece of silicon is melted between two 4H-SiC 4° off wafers, allowing a better spreading of the liquid than a Si drop approach. This successfully leads to highly step-bunched surfaces, though with irregular steps. The most regular step and terrace stuctures were found to be the result of epitaxial growth via a dissolution-precipitation process occuring from the edges to the center of the wafers. This is probably caused by radio-frequency induced electromagnetic convection within liquid Si. This process is quenched when using smaller liquid thickness.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
