Abstract
Numerous studies on the oxidation characteristics of common silicon carbide ceramics have revealed very good oxidation resistance in dry atmospheres, provided that the oxygen partial pressure is sufficiently high. On the contrary, as other SiO 2-passivated ceramics, SiC shows poor oxidation resistance in moist atmospheres. In this contribution, the oxidation behaviour at 1400 °C of fully dense SiC samples with Lu 2O 3–AlN and Lu 2O 3–Ho 2O 3 sintering additives is investigated. Similar to results recently reported for a novel Si 3N 4 material, it is demonstrated that Lu 2O 3 yields greatly improved oxidation behaviour as compared to other liquid phase sintered SiC materials. In particular, the Lu 2O 3–Ho 2O 3 additive leads to passive oxidation under a 0.01 MPa partial pressure of water.
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