Abstract
We developed a novel method to produce graphene on silicon carbide (SiC) at a temperature as low as 1000°C. The method is based on liquid phase growth (LPG) of graphene mediated by liquid gallium, which acts not only as a flux to store carbon dissolved from a surface of SiC when heated, but also as a catalyst to promote the formation of graphene on SiC when cooled. Our experimental results revealed that gallium-treated SiC substrates are coated with uniform and continuous graphene films. The LPG method is able to supply graphene films consisting of one to several hundreds of layers, depending on heating temperatures. Our approach can not only provide an alternative way to form graphene natively on SiC, but will also bring a technological breakthrough in industrial applications of graphene, e.g. the realization of graphene-on-insulator substrates.
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