Abstract
As a newly-developed two-dimensional (2D) material of group-IVA, few-layer silicon (Si) nanosheets were prepared by the liquid phase exfoliation (LPE) method. Its non-linear saturable adsorption property was investigated by 532 and 1064 nm nanosecond lasers. Using Si nanosheets as the saturable absorber (SA), passive Q-switched all-solid-state lasers were demonstrated for the first time. For different laser emissions of Nd3+ at 0.9, 1.06, and 1.34 µm, the narrowest Q-switched pulse widths were 200.2, 103.7, and 110.4 ns, corresponding to the highest peak powers of 2.76, 2.15, and 1.26 W. The results provide a promising SA for solid-state pulsed lasers and broaden the potential application range of Si nanosheets in ultrafast photonics and optoelectronics.
Highlights
The most famous 2D material, graphene, was exfoliated successfully from graphite for the first time in 2004 [1]
The saturable adsorption property of Si nanosheets was demonstrated by nanosecond lasers
Solid-state lasers were successfully realized for the first time
Summary
The most famous 2D material, graphene, was exfoliated successfully from graphite for the first time in 2004 [1]. Other 2D materials like graphene oxide [2], black phosphorus (BP) [3], topological insulators [4], and transition metal dichalcogenides (TMDs) [5] have been widely investigated and found to have potential applications in many fields such as biology, medical, communication and microelectronics. Passive Q-switching is the preferred technique to generate nanosecond and even picosecond laser pulses which possesses many advantages such as high performance, simplicity, and compactness. The emergence of graphene-like 2D materials accelerates the development of passively Q-switched lasers to an ultrabroad spectral region [5,14,15].
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