Abstract
ZnSe layers were grown epitaxially on (111)ZnSe substrates in a closed tube from a Ga solution by the temperature difference method. The grown layer under the condition that the substrate temperature was 1000°C showed strong blue emission even at room temperature. On the other hand, the layer at a lower substrate temperature and that obtained by the gradual temperature lowering method looked orange to the eye at room temperature, which are related to the Zn vacancy. In conclusion the room temperature blue emission from ZnSe epitaxial layer was obtained by controlling Zn vapor pressure during the crystal growth.
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