Abstract
We describe the epitaxy of n- and p-Hg 1− x Cd x Te on CdTe substrates up to 2 cm × 3 cm in area, using an atmospheric pressure horizontal slider system with a tellurium-rich growth liquid. Well controlled growth of Hg 1− x Cd x Te with x values of 0.2, 0.3, and 0.4 is described. Measurements of the semiconductor characteristics of the grown layers are presented.
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