Abstract
Ga 1− x Al x Sb 1− y As y /GaSb epitaxial layers were grown at a temperature of about 550°C. Arsenic was introduced into the melt at the same temperature from InAs or GaAs source wafers. It was found that the As content in the Ga-Al-Sb-Sb-As melt did not depend on the initial Sb concentration when the liquid phase was formed by saturating the Ga-Al-Sb melt from the GaAs wafer. When the InAs wafers were used for saturating the melt, the As fraction in the melt decreased with an increase of the initial Sb concentration. It has been demonstrated that strain due to lattice mismatch between the substrate and the solid in equilibrium with the liquid changes the phase equilibrium conditions and can result in stabilization of the composition of the melt.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
