Abstract
The wettability of a solution with the surface of line seeds is a key factor to improve the yield and uniformity of microchannel epitaxy (MCE) by liquid phase epitaxy (LPE). To improve the wetting, a special technique is proposed. In this technique, a thin In layer is deposited before the growth on the substrate with narrow line seeds in SiO 2 mask. The predeposited In film in the seed area greatly helps the solution to contact with the surface inside the line seeds even when the width and the length are very small. As a result, the yield of MCE has been drastically increased up to almost 100%.
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