Abstract
Growth of InGaAs lattice matched to InP was achieved for the first time on the (100) orientation of InP by liquid-phase epitaxy. Growth conditions and melt composition for such a growth are presented. In0.53Ga0.47As/InP and InP/In0.53Ga0.47As/InP heterojunction structures for 1.7-μm field-assisted photocathodes have also been fabricated on (100) InP substrates.
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