Abstract
Liquid-phase epitaxy (LPE) has been used to grow high-quality layers of InP and InGaAsP alloys on InP substrates for a wide variety of device-development and physical-measurement applications. An apparatus featuring a transparent furnace and an atmosphere with controlled amounts of H 2, PH 3 and H 2O has proved to be flexible enough for diverse crystal growth requirements. Carrier concentration vs temperature measurements on LPE-grown InP and InGaAsP samples with N D - N A in the low 10 15 cm -3 range show that they contain a moderate concentration of deep donors. There is evidence that these deep donor states also account for a strong peak in the photoluminescence seen in LPE-grown samples. Substrate-orientation studies have shown that critically oriented substrates improve the morphology for growth of heavily Zn-doped InP.
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