Liquid phase epitaxial growth of high purity In 1− xGa xAs and InP on (100) and (111)B faces

Abstract

The substrate orientation dependence of the impurity concentrations of In 1− x Ga x As and InP layers grown from baked solutions was investigated for the (100) and (111)B faces. The carrier concentrations of both In 1− x Ga x As and InP can be lowered by baking the growth solutions in a hydrogen atmosphere. The carrier concentration of the ternary and InP layers grown on the (111)B substrates are generally about twice as high as those on the (100) substrates, irrespective of the baking time. By SIMS analysis, S, Si and O were strongly detected in both ternary and InP layers. The impurity concentration for the (111)B oriented ternary layer is higher than that for the (100) oriented layer. The carrier concentration for both faces hardly depends on the growth rate. The carrier concentration depends on the substrate orientation because the distribution coefficient of impurities itself depends on the orientation. Baking the solutions at low temperature is preferable for the growth of high purity layers judging from the results of the evaporation experiments and the SIMS analysis.