Abstract
Liquid phase epitaxial growth of GaAs crystals was performed under a mixed gas flow, a Pd-diffused H2 gas and an arsenic vapor. It is found that liquid phase epitaxy under a mixed gas flow is effective in preparing high quality GaAs epitaxial layers with nearly stoichiometric composition. By using a mixed gas atomosphere, the un-doped epitaxial layers with carrier concentrations of the order of 1012cm-3 and mobilties of 170,000cm2/V sec at 77K were obtained reproducibly. The concentration of deep impurity in the epitaxial layers grown under a mixed gas atmosphere was approximately 5∼10 times less than that of the epitaxial layers grown under a H2 gas flow. Photocapacitance measurement at room temperature shows the existence of a deep level at 1.36µm in the epitaxial layers. It seems that the deep level is related to As vacancies, and/or to As vacancies associated with Cu.
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