Year-end Sale % OFF 
Abstract
InGaAsPGaAs(111)B pseudomorphic layers have been grown with elastic strains up to 1% and bandgaps ranging from 1.4 to 1.8 eV by liquid phase epitaxy (LPE) for the first time. Splitting of the valence band up to 50 meV was observed in these films. Photoemitters with the negative electron affinity state have been prepared by CsO activation of the strained InGaAsP films in ultrahigh vacuum (UHV).
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
