Abstract
Quasi-ternary alloys of (3GaAs)x{(3ZnSe)y(Ga2Se3)1-y}1-x were grown on a ZnSe(100) substrate from Ga solvent to which a certain amount of GaAs was added and saturated with ZnSe at 900°C, using a slide boat in a sealed quartz ampoule. Applying Se vapor pressure to the growth solution increased the Ga2Se3 content in the grown alloy layer, while the addition of Zn to the Ga solvent decreased it. The GaAs component in the grown alloy increased along the growth direction. Its content and variation range could be determined by the amount of source GaAs.
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