Liquid-immersion laser micromachining of GaN grown on sapphire

Abstract

Liquid-immersion nanosecond-pulsed laser micromachining is introduced as an efficient way for device isolation and rapid prototyping on GaN-on-sapphire wafer. Using deionized water as an ambient medium for laser micromachining, smooth trenches that are free from redeposition can be formed in the GaN layer. Coupled with the large difference between the ablation thresholds and ultraviolet absorption coefficients of GaN and sapphire, the GaN/sapphire interface can be left undamaged after the ablation process. This technique overcomes the limitation of heat accumulation in nanosecond-pulse regime, and offers a cost-effective alternative to ultrashort-pulse laser micromachining. In this report, the advantages offered by liquid immersion are elucidated in terms of improved heat conduction, increased plasma-induced recoil pressure due to water confinement, weakened plasma shielding effect in water, and the collapse of cavitation bubbles. Simulation results show that the reduced fluctuation of temperature profile over time in water could be correlated with the reduced redeposition of Ga from thermal decomposition at the trench sidewalls.