Abstract
A liquid CO2 (l-CO2)–based coating technique is used for the pore-filling of a porous copper indium gallium sulfide (CuInxGa1−xS2, CIGS) film synthesized by a solution-based method. In the l-CO2–based coating, copper and indium precursors dissolved in l-CO2 are deposited on the porous copper indium gallium oxide film, followed by low-temperature sulfurization. After the high-temperature sulfurization of the deposited film with the l-CO2–based coating, a highly dense CIGS film with almost complete pore-filling is obtained. The use of an indium rich solution in l-CO2 leads to the formation of near stoichiometric ratio of Cu:(In+Ga) that improves the pore filling behavior.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
