Liquid and Vapor Phase Growth of III-V Materials for Photonic Devices

Abstract

Precisely controlled epitaxial growth of microscopically thin semiconductor layers is essential for lightwave source and detector components. Achieving precise control while simultaneously meeting manufacturing volume and cost requirements is a demanding challenge. We are meeting that challenge with the development of advanced liquid and vapor phase epitaxial growth technologies. In this article we provide a review of the principles, a brief description of the state-of-the-art implementation, and a discussion of the advantages and limitations of the four epitaxial techniques we use — liquid phase epitaxy, trichloride and hydride vapor phase epitaxy, and metal-organic chemical vapor deposition epitaxy.