Abstract

This paper presents direct experimental evidence of Mn segregation at three types of antiphase boundaries in La2/3Sr1/3MnO3 thin films doped with ZrO2. The local atomic structure of these antiphase boundaries is investigated by high‐angle annular dark‐field and annular bright‐field imaging in a scanning transmission electron microscope. Chemical composition and cation valence are determined by electron energy‐loss spectroscopy. The evidence that strain relaxation and ZrMn substitution are driving forces for the formation of the antiphase boundaries is found in this study. Analysis of atomic structure, image contrast, Mn valence state, and Mn occupancy shows that the antiphase boundaries are charge‐neutral with minimized internal electric fields.

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