Linker engineering of larger POSS-based ultra-low-k dielectrics toward outstanding comprehensive properties

Abstract

Low-dielectric-constant (low-k) materials are an indispensable part of microprocessors as they can alleviate electronic crosstalk, charge build-up, and signal propagation delay. However, existing low-k materials usually have k values higher than 2 and inferior thermo-mechanical properties, which restrict the development of microelectronic devices. Although we have recently discovered that larger polyhedral oligomeric silsesquioxanes (POSS) are useful building blocks for fabricating advanced ultra-low-k materials, it remains to be seen whether a POSS cage and linker could be leveraged to tune the structure-property of the materials and create ultra-low-k materials with improved comprehensive properties. Herein, we propose a series of POSS-based hybrid materials (i.e., c-TnPBn and c-TnFn, n = 8, 10, and 12) that consist of distinct POSS cages and linkers. When the linker is kept identical, the gradual enlargement of the POSS cage enhances the porosity/free volume fraction of materials, resulting in quasi-linearly reduced k values for the resulting materials (k = 1.93 for c-T12PB12, 2.14 for c-T12F12). Meanwhile, the materials’ comprehensive properties can be significantly improved by increasing the POSS cage size or varying the linker’s length and type. As a result, ultra-low-k materials with good processability, low surface roughness (< 0.40 nm), excellent thermostability (> 480 °C), mechanical properties (elastic modulus > 2.5 GPa), and hydrophobicity have been obtained, and the low-k values can be maintained under high temperature (e.g., 300 °C) and wet condition. This work reveals the critical contribution of POSS cage size and linker to the structure and properties of POSS-based low-k materials and offers promising materials for the future of the microelectronic industry.