Abstract
Linewidth control of small lines over non-planarized topography is particularly challenging due to resist thin film interference effects and reflective notching. This paper compares the linewidth control performance of several deep-UV resist processes, using dyed resist and both top and bottom anti-reflection coatings. Only the bottom anti-reflective coating (BARC) provides adequate linewidth control for development work on 0.25 micron gate patterning. The BARC and resist coating behavior over isolation topography is characterized using atomic force microscopy and correlated to residual linewidth variation. The performance of a zero bias etch process for BARC removal is also presented.
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