Linewidth characterization of a self-traceable grating by SEM

Abstract

To achieve high-precision nanometrology, a self-traceable grating reference material has been reported and prepared using atom lithography and soft x-ray interference techniques (Liu et al 2021 Nanotechnology 32 175 301). In this work, we employ a Monte Carlo simulation method to investigate the scanning electron microscopy (SEM) image contrast and linewidth characterization of the grating linewidth. The 3D structure of mushroom-shaped grating lines made of multilayers (Pt, SiO2 and Si) is modeled according to transmission electron microscopy (TEM) images, enabling the SEM linescan profiles of secondary electron signals to be obtained for different values of structural linewidth parameters from Monte Carlo simulations. Using the principle of the model-based library method, a model database of Monte Carlo-simulated SEM linescan profiles is thus constructed by varying the incident electron beam conditions and the grating linewidths; then, the grating linewidth is successfully characterized using experimental SEM images. The comparison with the TEM measurement reveals that the measurement accuracy is verified to within 0.3% for the linewidth of ∼25 nm.