Abstract
Terahertz-frequency intersubband (ISB) transitions in semiconductor quantum wells are of interest due to the potential for making devices that operate at THz frequencies, and the influence of many-body interactions on the intersubband dynamics. We present measurements of the linear absorption linewidth of ISB transitions in a single 40 nm delta-doped GaAs/Al 0.3Ga 0.7As square quantum well, with a transition energy of order 10 meV (3 THz). Separate back- and front-gates allow independent control of charge density (0.1– 1×10 10 cm −2 ) and DC bias (−2.5– 0.5 mV/ nm ). A picture of scattering of the intersubband plasmon into single-particle excitations qualitatively explains the DC bias dependence of the line-width data.
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