Abstract
AbstractGallium nitride (GaN) high‐electron mobility transistor (HEMT) Doherty amplifiers with the optimized linearity for wide‐band code division multiple access (WCDMA) applications are represented. At a 7‐dB back‐off output power, the measured single‐carrier WCDMA results show two‐way and three‐way GaN HEMT Doherty amplifiers with an adjacent channel leakage ratio (ACLR) of −43.2 and −48.2 dBc at ±2.5 MHz offset frequency with a drain efficiency of 43.1% and 30.9%, respectively. © 2008 Wiley Periodicals, Inc. Microwave Opt Technol Lett 50: 701–705, 2008; Published online in Wiley InterScience (www.interscience.wiley.com). DOI 10.1002/mop.23181
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