Abstract

The design technique of two CMOS optical receiver circuits for high-frequency applications is presented. Transimpedance amplifier (TIA) structures, based on the common-gate configuration and using local negative feedback, are discussed. The linearity, noise level, and bandwidth are the characteristics mainly focused. The linearity analysis of the TIA circuits is realized by means of Volterra series. Simulations were performed using BSIM3v3 and EKV models. Experimental and simulation results were performed for a 0.8 /spl mu/m BiCMOS AMS process, using HSPICE simulator. Experimental results, obtained from S-parameters, show a transimpedance gain of 40 dB and a bandwidth of 2 GHz.

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