Abstract
In order to optimize MOS device structure for RFIC applications, linearity assessment is of paramount importance. The unwanted noise signals are generated due to non-linear performance of the device, which distorts the desired output. In this work, we investigate the linearity performance of symmetric double material gate insulator by replacing silicon dioxide as gate insulator using different heterogeneous dielectrics in symmetric manner. The main figure of merits examined are transconductance (g m ), higher order transconductance (g m ’, g m ’’), 1-dB compression point (1-dB C. P.) third order intermodulation distortion (IMD3) and third-order voltage intercept point (VIP 3 ). It is observed that symmetric double material gate insulator based MOS structure with hafnium oxide at source side and titanium oxide at drain side has better performance as compared to other SDMGI FDSOI MOSFET counterpart and establishes better reliability for RFIC applications. The result has been simulated using Silvaco TCAD tool.
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