Abstract
An analysis describing nonlinearities in shunt aperture tuning radio frequency (RF) switches operating in OFF-state is presented in this article. The focus is put on the analysis of second- and third-order nonlinear products and their power distribution as a function of geometry of high-voltage (HV) field-effect-transistor (FET)-based RF switch. According to the results of analysis, the third-order nonlinear product can be reduced by 6 dB at the expense of 4.1 dB increase in the second-order product by doubling the stack size and transistor width used in the switch. The analytical findings are verified with measurements for which two integrated circuits (ICs) were designed and manufactured in Infineon 130-nm RF switch technology. The experiment demonstrated reasonable hardware-to-model correlation, showing around +8 and −7 dB difference in second and third harmonic and intermodulation (IM) products between high-voltage (HV) and low-voltage (LV) RF switches, respectively.
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