Abstract
An X-band gallium-nitride high electron mobility transistor (GaN HEMT) transformer-based Doherty power amplifier (TBD PA) module with a phase lineariser has been developed. The TBD PA uses Cree's 6 W GaN HEMT bare die and realised in seven-layer PCB. The proposed lineariser is employed before the TBD PA to compensate the phase distortion during the Doherty operation. The implemented TBD PA with 9.56 GHz continuous wave test shows a 38.5% power-added efficiency at 39.6 dBm output power. Linearity characterisation is also performed using 40 MHz bandwidth, two carriers aggregated long-term evolution-advanced signal and shows −35.4 dBc carrier aggregation evolved-universal terrestrial radio access adjacent channel leakage power ratio which is 7 dB enhanced after phase compensation.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callSimilar Papers
More From: Electronics Letters
Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
