Abstract
The Rashba spin-orbit splitting of a hydrogenic donor impurity in GaAs/GaAlAs quantum wells is investigated theoretically in the framework of effective-mass envelope function theory. The Rashba effect near the interface between GaAs and GaAlAs is assumed to be a linear relation with the distance from the quantum well side. We find that the splitting energy of the excited state is larger and less dependent on the position of the impurity than that of the ground state. Our results are useful for the application of Rashba spin-orbit coupling to photoelectric devices.
Highlights
The Rashba spin-orbit splitting of a hydrogenic donor impurity in GaAs/GaAlAs quantum wells is investigated theoretically in the framework of effective-mass envelope function theory
In the framework of effective-mass envelope–function theory, excluding the relativity effect, the electronic states have been studied for a hydrogenic donor impurity in quantum wells (QWs) [1–5] and its important application in the photoelectric devices
Gvozdicet al. studied efficient switching of Rashba spin splitting in wide modulation-doped quantum wells [7]. They demonstrated that the size of the electric-field induced Rashba spin splitting in an 80-nm wide modulation-doped InGaSb QW depends strongly on the spatial variation of the electric field
Summary
The Rashba spin-orbit splitting of a hydrogenic donor impurity in GaAs/GaAlAs quantum wells is investigated theoretically in the framework of effective-mass envelope function theory. Presented a theoretical study of the electronic structure of a CdMnTe quantum dot with Rashba spin-orbit coupling in the presence of a magnetic field. The multiband k Á p theory was used to describe electrons in Rashba spin-orbit coupling regimes and an external magnetic field[9].
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