Abstract

We present calculated dielectric function ε( ω) and linear optical absorption α( ω) of the cubic and hexagonal structures of BN, AlN, GaN, and InN, employing an all-electron linearized augmented plane wave method within the local density approximation (LDA) plus quasi-particle (QP) correction. We show that this LDA+QP approach yields accurate high-frequency dielectric constant ε( ∞). Moreover, by employing a modelled electron–optical phonon interaction we calculate the static dielectric function ε(0).

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