Linear magnetoresistance in a topological insulator Ru2Sn3

Y Shiomi,E Saitoh

doi:10.1063/1.4978773

Abstract

We have studied magnetotransport properties of a topological insulator material Ru2Sn3. Bulk single crystals of Ru2Sn3 were grown by a Bi flux method. The resistivity is semiconducting at high temperatures above 160 K, while it becomes metallic below 160 K. Nonlinear field dependence of Hall resistivity in the metallic region shows conduction of multiple carriers at low temperatures. In the high-temperature semiconducting region, magnetoresistance exhibits a conventional quadratic magnetic-field dependence. In the low-temperature metallic region, however, high-field magnetoresistance is clearly linear with magnetic fields, signaling a linear dispersion in the low-temperature electronic structure. Small changes in the magnetoresistance magnitude with respect to the magnetic field angle indicate that bulk electron carriers are responsible mainly for the observed linear magnetoresistance.

Highlights

Dirac fermion systems have recently attracted much attention in spintronics,[1] because of their potential high efficiency in the interconversion between spin currents and charge currents
In topological insulators (TIs), strong spin-orbit coupling opens a charge gap in the bulk states, but 2D Dirac fermion systems appear on the surfaces
On topological insulators e.g. Bi2Se35 and α-Sn,[6] efficient interconversion between spin currents and charge currents was reported at room temperature

Summary

Introduction

Dirac fermion systems have recently attracted much attention in spintronics,[1] because of their potential high efficiency in the interconversion between spin currents and charge currents. Our magnetotransport study on bulk single crystals of Ru2Sn3 shows that linear magnetoresistance is observed at low temperatures.

Results

Conclusion