Abstract
Very dilute two-dimensional hole systems were probed by resonant inelastic light scattering. This extremely high mobility system occurs in AlxGa1−xAs∕GaAs quantum wells designed specifically for their light insensitivity. We find that the depolarization shift in intersubband transitions decreases linearly for hole densities below p=6.6×1010cm−2, dropping to zero below p=1×1010cm−2.
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