Abstract
Matrix elements of optical transitions occuring between the subbands of the valence band of a p-GaAs type semiconductor are calculated. Transitions associated with the non-simultaneous absorption of single photons and simultaneous absorption of two photons are taken into account. The expressions are obtained for the average values of the square modulus of matrix elements calculated with respect to the solid angle of the wave vector of holes. Linear-circular dichroism of four-photon absorption of light in semiconductors with a complex valence band is theoretically studied.
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