Abstract
The growth of Ge nanoclusters on a prepatterned Si (100) surface formed by imprint lithography in combination with subsequent irradiation with Ge+ ions is studied. The prepatterned surface presents a system of parallel 10-nm-wide grooves repeating with a period of 180 nm. Irradiation of the substrate was conducted at two temperatures, room temperature (cold irradiation) and 400°C (hot irradiation). It is shown that, during epitaxy (550–700°C), the residual radiation defects located in the bulk under the grooves suppress the nucleation of Ge nanoclusters in the grooves. In the case of prepatterned substrates, from which imperfect regions are completely removed, nanoclusters grow in the grooves.
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