Linear and Periodic State Integrated Circuits Noise Simulation Benchmarking

Abstract

Advanced noise simulation is performed using linear and periodic state RF-CMOS circuit vehicles. As a linear vehicle, an operation amplifier is designed with two amplification stages while as periodic state, a ring oscillator operating in the high frequency region. The small signal noise analyses and phase noise analyses are benchmarked versus large signal direct time domain noise analysis, in relation to the obtained accuracy, the simulation parameters ruling the accuracy and the needed simulation time. The theoretical background of direct time domain (transient) noise analysis, its implementation and the used simulation model together with simulation time-saving and circuit diagnostics capabilities are addressed. In addition, the respective MOSFET noise sources – thermal, flicker and gate noise – are analyzed per device, versus their contribution and their simulation accuracy for both cases (linear and periodic state). Simulation guidelines for a proper noise behavior extraction are summarized and categorized according to each circuit type.