Abstract
Series of double quantum dots each with a size around 400 × 400nm2 have been realized by delineating a 2DEG in modulation-doped AlGaAs/GaAs with 100 nm wide Schottky split gates fabricated by an electron-beam lithography and a lift-off technique. The split gate in the middle of the double dot allows us to control interdot coupling widely. The charging diagram obtained from linear transports in the Coulomb blockade regime shows that the isolated dots merge into a single composite dot with increase of interdot coupling. A clear Coulomb staircase has been observed in the double-dot system at a limited high-bias condition.
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