Abstract

In this present work, the effects of the structure parameters such as the right-well width and the right-barrier height on the linear, third-order nonlinear and total absorption and refractive index changes of asymmetric double semi-V-shaped quantum well are theoretically studied by using the compact-density matrix approach and iterative method. The electronic structure of this system is obtained by solving Schrödinger equation within the framework of effective mass approximation. Numerical results are presented for a typical GaAs/AlxGa1-xAs asymmetric double semi-V-shaped quantum well. The obtained results show that the right-well width and the right-barrier height have great effects on the optical characteristics of these structures.

Full Text
Published version (Free)

Talk to us

Join us for a 30 min session where you can share your feedback and ask us any queries you have

Schedule a call