Abstract

In this study, the effects of the external fields (electric and tilted magnetic fields) and well parameters on the optical absorption coefficients in GaAs/GaAlAs multiple (five) quantum wells under the applied electric and tilted magnetic fields has been investigated theoretically. Firstly, the energy eigenvalues and eigen functions of an electron confined in multiple quantum wells are calculated by analytically from Schrödinger equation using the transfer matrix method within the effective mass approximation, Secondly, the linear, nonlinear and total intersubband optical absorptions in GaAs/GaAlAs multiple quantum wells system are studied within the compact density-matrix approach. It is shown that the parameters such as strenghts of the external fields and θ-tilted angle values not only shift the peak positions in absorption spectrum but also considerably modify their potential heights. In generally, electronic and optical properties of the quantum wells are very sensitive to the applied external fields and well parameters. Therefore, we can conclude that the effect of the external fields can be used to tune and control the optical properties of interest in the range of the far-infrared electromagnetic spectrum.

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