Abstract
The linear and non-linear optical properties of different geometrical structures of gallium arsenide (GaAs) nanowires have been studied by employing ab initio method. We have calculated the optical response of four different GaAs nanowires, viz., two-atom linear wire, two-atom zigzag wire, four-atom square wire and six-atom hexagonal wire. We have investigated imaginary part of the zz component of the linear dielectric tensor and second-order susceptibility for different structures along with bulk material. We revealed that the strongest absorption occurs for four-atom square nanowire configuration.
Highlights
Gallium arsenide (GaAs) semiconducting nanowires with diameters ranging from 1 to 400 nm and length of up to hundreds of micrometers have shown remarkable optical properties and they will prove to be the versatile building blocks for optoelectronic circuits at a nanoscale
The linear and non-linear optical properties of different geometrical structures of gallium arsenide (GaAs) nanowires have been studied by employing ab initio method
We have calculated the optical response of four different GaAs nanowires, viz., two-atom linear wire, twoatom zigzag wire, four-atom square wire and six-atom hexagonal wire
Summary
Gallium arsenide (GaAs) semiconducting nanowires with diameters ranging from 1 to 400 nm and length of up to hundreds of micrometers have shown remarkable optical properties and they will prove to be the versatile building blocks for optoelectronic circuits at a nanoscale. GaAs semiconducting nanowires offer a unique approach for the bottom-up assembly of electronic and photonic devices with a potential for on-chip integration of. The second-order response or non-linear property is a two-photon process where the excited electron absorbs another photon of the same frequency and makes a transition to another allowed state at higher energy. When this electron is falling back to its original state, it emits a photon of frequency, which is twice the frequency of that of the incident light (Srivastava et al 2008; Srivastava and Singh 2008; Singh and Srivastava 2013)
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