Abstract
ABSTRACTWe report the use of a swept line–source electron beam for liquid phase recrystallization of Si films on Si3N4 layers over Si substrates. For the case of 5000Å of Si on 1000Å of Si3N4 layers over Si Si3N4, we have demonstrated the growth of Si crystalline regions as large as 0.5 × 5 mm of predominately [100] orientation normal to the film and [010] in the sweep direction. The nucleation of grain growth for this case occurred at small defects in the nitride layer at the edge of the treated area, growing out as far as 500 μm over intact nitride. Thicker nitrides (2500Å) remained intact at power densities useful for treating the Si film. For this thicker nitride we demonstrate non–seeded growth for single and repetitively melted Si. In all cases the surface morphology of the regrown regions is suggestive of rapid growth along <100> directions.
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