Abstract
We report the growth of LiNbO 3 thin films onto In 2 O 3 :Sn-coated -Si substrates by standard radio-frequency sputtering. Multi-layer procedures, up to 4 successive deposits, have been developed that can subsequently improve the structural and macroscopic ferroelectric properties of such as-grown composite structures. The enhancement of polarization, as high as 40 μC.cm -2 in 4 stacked layers, is attributed to c-oriented seed-layer-induced crystallization (self-polarization) and interfacial (migratory) polarization.
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