Abstract
We study thermal-piezoresistive cooling in silicon micromechanical resonators at large currents and high temperatures. Crossing a thermal transition region corresponds to a steep reduction in resonance frequency, an abrupt plateauing in the effective quality factor, and a large increase in thermomechanical fluctuations. Comparing measurements with simulations suggests that the second-order temperature coefficients of elasticity of doped silicon are not sufficient to capture the drop in resonance frequency at large currents. Overall, our results show that there are clear thermal limits to cooling a resonant mode using current-controlled thermal-piezoresistive feedback in silicon.
Highlights
M ICRO- and nano-electromechanical (MEM/NEM) resonators have wide utility as resonant sensors [1], [2], oscillators [3], and filters [4]
Fabrication was performed in the nano@Stanford labs, which are supported by the National Science Foundation (NSF) as a part of the National Nanotechnology Coordinated Infrastructure under Award ECCS-1542152, with support from the Defense Advanced Research Projects Agency Precise Robust Inertial Guidance for Munitions (PRIGM) Program, managed by Ron Polcawich and Robert Lutwak
The high temperature annealing step inherent to this fabrication process makes our devices well-suited for studying large current effects
Summary
M ICRO- and nano-electromechanical (MEM/NEM) resonators have wide utility as resonant sensors [1], [2], oscillators [3], and filters [4]. The resonance frequency and effective quality factor decrease with increasing current.
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