Abstract
Calculations of the limiting efficiency of silicon solar cells generally treat surface recombination as an extrinsic parameter which can be made arbitrarily small. In the present paper, modifications to these limits for both bulk and thin film silicon solar cells are calculated for the case of finite surface recombination velocity characterized in terms of the voltage limit imposed by these recombination processes. Based on the best experimental levels of surface passivation yet demonstrated, the limiting efficiency for a 1 μm thick silicon cell is shown to be 19·8%, while that for a 400 μm thick cell is 26·2%, both under standard test conditions. Copyright © 1999 John Wiley & Sons, Ltd.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callMore From: Progress in Photovoltaics: Research and Applications
Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
