Abstract
Abstract The limiting carrier effect in a-Si:H p–i–n and n–i–p solar cells has been investigated computationally, by adjusting the values of the carrier band mobilities. Using a realistic optical generation rate profile, it was found that the effect is significant in both types of cell, with the electron identified as the limiting carrier in the p–i–n cell, and the hole in the n–i–p cell. However, using a uniform generation rate profile in the simulation indicated that the limiting carrier effect was much less significant, and that device performance in both cells seemed to be slightly more sensitive to the hole transport properties than to the electron transport properties.
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