Abstract
A comprehensive picture of the relationship between optical fluence, optical wavelength, system load, and photocurrent efficiency (PE) in SiC photoconductive semiconductor switches (PCSSs) is presented. Variation of the optical wavelength (300–380 nm) and optical fluence (0.2–200 J m−2) was accomplished with a Nd:YAG pumped optical parametric oscillator (7 ns FWHM) and a broadband variable attenuator. The PE was found to typically be in the range of 1–2 %, depending on wavelength, and the bulk PCSS on-state voltage driven by external circuit parameters. Features of the high electric field stress behavior (> 200 kV/cm) of the bulk PCSS were captured with high fidelity in a 1D drift-diffusion model with a self-consistent Poisson solver including trap assisted tunneling, Poole-Frenkel, and barrier lowering with enhanced tunneling effects. In addition, trap to band impact ionization as well as Coulombic and repulsive trapping potentials were included.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
